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This video is part of the appearance, “Intel Presents at Storage Field Day 11“. It was recorded as part of Storage Field Day 11 at 9:30 - 11:30 on October 5, 2016.
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The discussion will cover how Intel has built on its history of flash cell technology leadership to deliver a breakthrough 3D NAND innovation that is architected for the highest areal density and is based on a proven technology that is optimized for yield and reliability. Also reviewed is the recent suite of 3D NAND products spanning 3 market segments that Intel launched recently.
Recorded at Storage Field Day 11 in San Jose, CA on October 5, 2016. For more information, please visit http://Intel.com/ or http://TechFieldDay.com/event/sfd11/
Personnel: Pranav Kalavade